Technical Ceramics
Ceramic insulating discs are mainly made of aluminium oxide or aluminium nitride. The Alo-96 and -99 oxide ceramic aluminium oxide (Al2O3) is the most well-known oxide ceramic material.
In cooperation with well-known German and Japanese manufacturers, ICT SUEDWERK has a whole range of material types with different property profiles and different purity levels, which are adjusted via a specific structure.
The ceramic discs can typically be supplied from 0.5 up to 2 mm or even thicker depending on the specification.
ICT-ALN-200 aluminium nitrite ceramic is the cool high-performance solution; Ideal for electronic peak performance.
Maximum performance coupled with high packing density in minimal space inevitably means that electronic components also develop ever higher temperatures. Here, the application directly dictates the best-suited Tim to dissipate the heat released to protect the components quickly and reliably. At this point, ICT SUEDWERK with its high-performance suppliers for aluminium nitride ceramics (AlN) comes into play and supplies the ICT-ALN-200, a product with outstanding insulation properties and an extremely high thermal conductivity (≥ 180 W/mK), which is perfectly suited for very high performance in the electronics sector.
Here, too, typically ceramic discs can be supplied from 0.5 up to 2 mm or even thicker depending on the specification.
| Properties | Unit | ICT-ALN-200 | ICT-ALO-96 / 99 (S) |
|---|---|---|---|
| Material | Aufbau | Aluminium-Nitrid | Aluminium-oxid |
| Material gauge (mm) | mm | 0,5 .. 2,0 | 0.5 .. 2.0mm |
| Color | - | Translucent Medium Gray | white |
| Filler | - | AIN | (ALO2O3) |
| Density | g/cm³ | 3,3 | 3,8 |
| Evenness, unmachined on 25 mm (Planizität) | mm | 0,025 | 0,150 |
| Compression strength | kN/mm² | 2,00 | 3,00 |
| Coarseness, unmachined | µm | ~ 0.6 | - |
| Bending strength | n/mm² | 360 | 380 |
| Hardness | Härte (nach MOHS) (Elastizitätsmodul) | 9 | 9 |
| Dielectric strength | kV (AC) | - | 15 kV/mm |
| Volume resistivity | Ω/m | 0,00 > 1,90x10^15 | 1,00 1.0 x 10² |
| Dielectric constant | - | 8,6 | 9,8 @Frequency 1.00e 6 Hz |
| Thermal conductivity | W/m*K | 180,00 | 25,00 |
| Operating temperature | °C | from 0 °C to 1000 °C | from -65 °C to 850 °C |
| Material purity | % | - | 96,00 |
| Coarseness, unmachined | µm | - | 0,90 ~ 1,3 |
- Medium thermal conductivity (20 to 180 w/MK)
- Excellent electrical isolation (1 x 1014 to 1 x 1015 ωcm)
- Flexural Strength (800 MPa), High compressive strength (2 to 4 GPA)
- Arithmetic mean roughness value in (µm) RA (µm) profilometer (0.8 mm cutoff)
-
Thermal shock Resistant
- Max operating temp. between 1000 to 1500 °c (without mechanical load)
- All dimensions available for standard semiconductor enclosure
- In dimensions according to customer specification
- Can be excellently processed with all commercial thick film pastes
- Suitable for many thin applications (sputtering)
- Surface as-fired: RA 0.2-0.8 µm thick layer suitable (s)
- Surface as-fired: RA < 0.1 µm thin Film suitable
- Dimensions: 115 x 115/165 x 115/190 x 138 mm
- In the dimensions of common standard semiconductor housings
- In dimension according to customer specification
- Thickness: 0.50-2.0 mm (+/-10%)
- On request also other material thicknesses
- Deflection from thickness 0.5 mm 0.2-0.3% of longest side
- For IGBT modules
- Brake Resistors
- Thick film and thin film technology
- In telecommunications
- For refrigeration systems
- In the high-performance led range.
- Many other applications