ICT-ALO-96 / 99 (S) 25,00
Technical Ceramics
ICT-ALO-96 and 99 (S) has excellent thermal properties combined with mechanical stability and high electrical insulation.These are also the mainspring to use ceramic materials wherever an improved thermal conductivity is required.
ICT- ALO-96 and -99 (S) can be excellently processed with all commercial thick layer pastes due to the excellent surface quality of both sides and are even suitable for many thin applications (sputtering).
Despite the high thermal conductivity, there is generally the problem that for optimum connection of the power component to the heat sink either a metallization is required or a TIM in the form of thermal paste or heat conducting adhesives has to be applied on the interface. Because the optimal thermal path - the heat transfer - is only guaranteed if the thermal barriers are reduced.
Our tip: Use phase change material without substrate carrier. This ICT product variant is ideally suited here:
- ICT-Xp45-4W-14R | series
or combined with both Fill-up StICK product variants:
- ICT-BAR-In- (or Ac) -19G / 001 or
- ICT-PEN-In- (or Ac) -19G / 001
General Properties | Unit | ICT-ALO-96 / 99 (S) |
---|---|---|
Material | Aufbau | Aluminium-oxid |
Color | - | white |
Material gauge (mm) | mm | 0.5 .. 2.0mm |
Material purity | % | 96,00 |
Filler | - | (ALO2O3) |
Density | g/cm³ | 3,8 |
Evenness, unmachined on 25 mm (Planizität) | mm | 0,150 |
Coarseness, unmachined | µm | 0,90 ~ 1,3 |
Compression strength | kN/mm² | 3,00 |
Bending strength | n/mm² | 380 |
Hardness | Härte (nach MOHS) (Elastizitätsmodul) | 9 |
Dielectric strength | kV (AC) | 15 kV/mm |
Volume resistivity | Ω/m | 1,00 1.0 x 10² |
Dielectric constant | - | 9,8 @Frequency 1.00e 6 Hz |
Thermal conductivity | W/m*K | 25,00 |
Operating temperature | °C | from -65 °C to 850 °C |
Properties
- Low density (3.78 to 3.95 g/cm³)
- Very good electrical insulation (15kV/mm)
-
Medium to extremely high mechanical strength (300 to 630 MPa)
-
Very high compressive strength (2000 to 4000 MPa)
- Very high hardness (9 Mohs)
- Medium thermal conductivity (25-30 W/mK)
- Operating temperature without mechanical load 1000 to 1500 °c
- High corrosion and wear resistance
-
Good gliding properties
Delivery Forms
- All dimensions available for standard semiconductor enclosure
- In dimensions according to customer specification
- Also available in plate dimensions: 115 x 115/ 165 x 115/ 190 x 138 mm
- Thickness: 0,50 - 2.0 mm (+/- 10%)
- Additional material thickness can be requested
No warranties or liabilities can be taken for the displayed information.